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Results 1 to 25 of 56

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Current-voltage characteristics of electric contacts on p-type ZnSeYANG, Z; SCHETZINA, J. F.Journal of electronic materials. 1994, Vol 23, Num 10, pp 1071-1074, issn 0361-5235Article

Growth of high mobility n-type CdTe by photoassisted molecular beam epitaxyBICKNELL, R. N; GILES, N. C; SCHETZINA, J. F et al.Applied physics letters. 1986, Vol 49, Num 17, pp 1095-1097, issn 0003-6951Article

Reflectance of AlAs-GaAs and In0.28 Ga0.72 As-GaAs superlatticesLAIDIG, W. D; BLANKS, D. K; SCHETZINA, J. F et al.Journal of applied physics. 1984, Vol 56, Num 6, pp 1791-1796, issn 0021-8979Article

Blue-green laser diodes on ZnSe substratesYU, Z; BONEY, C; HUGHES, W. C et al.Electronics Letters. 1995, Vol 31, Num 16, pp 1341-1342, issn 0013-5194Article

Blue and green light-emitting diode structures grown by molecular beam epitaxy on ZnSe substratesEASON, D; REN, J; YU, Z et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 718-724, issn 0022-0248, 2Conference Paper

Photoluminescence of HgTe/CdTe superlattices under high hydrostatic pressuresCHEONG, H. M; BURNETT, J. H; PAUL, W et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 7, pp 4460-4463, issn 0163-1829Article

Arsenic-doped CdTe epilayers grown by photoassisted molecular beam epitaxyHARPER, R. L. JR; HWANG, S; GILES, N. C et al.Applied physics letters. 1989, Vol 54, Num 2, pp 170-172, issn 0003-6951Article

Negative energy gap in HgTe-CdTe heterostructures with thick wellsHOFFMAN, C. A; MEYER, J. R; BARTOLI, F. J et al.Physical review. B, Condensed matter. 1989, Vol 40, Num 6, pp 3867-3871, issn 0163-1829, 5 p.Article

The effects of a high-temperature anneal on the electrical and optical properties of bulk CdTe:InGILES, N. C; HWANG, S; SCHETZINA, J. F et al.Journal of applied physics. 1988, Vol 64, Num 5, pp 2656-2665, issn 0021-8979Article

Light hole interband transitions in HgTe-HgCdTe superlatticesSCHULMAN, J. N; WU, O. K; PATTEN, E. A et al.Applied physics letters. 1988, Vol 53, Num 24, pp 2420-2422, issn 0003-6951Article

An electroreflectance study of CdTeENLOE, W. S; PARKER, J. C; VESPOLI, J et al.Journal of applied physics. 1987, Vol 61, Num 5, pp 2005-2010, issn 0021-8979Article

Cd1-xMnx Te-CdTe multilayers grown by molecular beam epitaxyBICKNE, R. N; YANKA, R. W; GILES-TAYLOR, N. C et al.Applied physics letters. 1984, Vol 45, Num 1, pp 92-94, issn 0003-6951Article

MBE growth and properties of ZnO on sapphire and SiC substratesJOHNSON, M. A. L; FUJITA, S; ROWLAND, W. H et al.Journal of electronic materials. 1996, Vol 25, Num 5, pp 855-862, issn 0361-5235Article

MBE growth and properties of GaN and AlxGa1-xN on GaN/SiC substratesJOHNSON, M. A. L; FUJITA, S; ROWLAND, W. H et al.Journal of electronic materials. 1996, Vol 25, Num 5, pp 793-797, issn 0361-5235Article

Growth of HgSe and Hg1-xCdxSe thin films by molecular beam epitaxyLANSARI, Y; COOK, J. W; SCHETZINA, J. F et al.Journal of electronic materials. 1993, Vol 22, Num 8, pp 809-813, issn 0361-5235Conference Paper

High-resolution study of stimulated emission from blue-green laser diodesYU, Z; REN, J; OTSUKA, N et al.Applied physics letters. 1992, Vol 61, Num 11, pp 1266-1268, issn 0003-6951Article

Improved ohmic contacts for p-type ZnSe and related p-on-n diode stucturesLANSARI, Y; REN, J; SNEED, B et al.Applied physics letters. 1992, Vol 61, Num 21, pp 2554-2556, issn 0003-6951Article

Transport investigation of HgTe-CdTe single and multiple quantum wellsHOFFMAN, C. A; MEYER, J. R; BARTOLI, F. J et al.Surface science. 1990, Vol 228, Num 1-3, pp 45-48, issn 0039-6028Conference Paper

Diluted magnetic semiconductor (Cd1-xMnxTe) Schottky diodes and field-effect transistorsDREIFUS, D. L; KOLBAS, R. M; HARPER, R. L et al.Applied physics letters. 1988, Vol 53, Num 14, pp 1279-1281, issn 0003-6951Article

CdTe metal-semiconductor field-effect transistorsDREIFUS, D. L; KOLBAS, R. M; HARRIS, K. A et al.Applied physics letters. 1987, Vol 51, Num 12, pp 931-933, issn 0003-6951Article

Spin-flip Raman scattering from Cd1-xMnxTe:In epilayers and modulation-doped Cd1-xMnxTe:In/CdTe superlattices grown by photoassisted molecular-beam epitaxySUH, E.-K; BARTHOLOMEW, D. U; RAMDAS, A. K et al.Physical review. B, Condensed matter. 1987, Vol 36, Num 17, pp 9358-9361, issn 0163-1829Article

High resolution electron microscope study of epitaxial CdTe-GaAs interfacesOTSUKA, N; KOLODZIEJSKI, L. A; GUNSHOR, R. L et al.Applied physics letters. 1985, Vol 46, Num 9, pp 860-862, issn 0003-6951Article

Surface preparation of ZnSe substrates for MBE growth of II-VI light emittersHUGHES, W. C; BONEY, C; JOHNSON, M. A. L et al.Journal of crystal growth. 1997, Vol 175-76, pp 546-551, issn 0022-0248, 1Conference Paper

Integrated heterostructure devices composed of II-VI materials with Hg-based contact layersREN, J; EASON, D. B; CHURCHILL, L. E et al.Journal of crystal growth. 1994, Vol 138, Num 1-4, pp 455-463, issn 0022-0248Conference Paper

Atomic-nitrogen production in a radio-frequency plasma sourceVAUDO, R. P; YU, Z; COOK, J. W et al.Optics letters. 1993, Vol 18, Num 21, pp 1843-1845, issn 0146-9592Article

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